23
LTC4212
4212f
Table 6. N-Channel Selection Guide
CURRENT LEVEL (A)
PART NUMBER
DESCRIPTION
MANUFACTURER
0 to 2
MMDF3N02HD
Dual N-Channel SO-8
ON Semiconductor
R
DS(ON)
= 0.1&, C
ISS
= 455pF
2 to 5
MMSF5N02HD
Single N-Channel SO-8
ON Semiconductor
R
DS(ON)
= 0.025&, C
ISS
= 1130pF
5 to 10
MTB50N06V
Single N-Channel DD Pak
ON Semiconductor
R
DS(ON)
= 0.028&, C
ISS
= 1570pF
10 to 20
MTB75N05HD
Single N-Channel DD Pak
ON Semiconductor
R
DS(ON)
= 0.0095&, C
ISS
= 2600pF
Table 7. Manufacturers Web Sites
MANUFACTURER
WEB SITE
TEMIC Semiconductor
www.temic.com
International Rectifier
www.irf.com
ON Semiconductor
www.onsemi.com
Harris Semiconductor
www.semi.harris.com
IRC-TT
www.irctt.com
Vishay-Dale
www.vishay.com
Vishay-Siliconix
www.vishay.com
Diodes, Inc.
www.diodes.com
APPE DIX
PACKAGE DESCRIPTIO
MS Package
10-Lead Plastic MSOP
(Reference LTC DWG # 05-08-1661)
MSOP (MS) 0603
0.53 ?0.152
(.021 ?.006)
SEATING
PLANE
0.18
(.007)
1.10
(.043)
MAX
0.17 0.27
(.007 .011)
TYP
0.127 ?0.076
(.005 ?.003)
0.86
(.034)
REF
0.50
(.0197)
BSC
1 2 3 4 5
4.90 ?0.152
(.193 ?.006)
0.497 ?0.076
(.0196 ?.003)
REF
8
9
10
7 6
3.00 ?0.102
(.118 ?.004)
(NOTE 3)
3.00 ?0.102
(.118 ?.004)
(NOTE 4)
NOTE:
1. DIMENSIONS IN MILLIMETER/(INCH)
2. DRAWING NOT TO SCALE
3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS.
MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS.
INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE
5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX
0.254
(.010)
0? 6?TYP
DETAIL A
DETAIL A
GAUGE PLANE
5.23
(.206)
MIN
3.20 3.45
(.126 .136)
0.889 ?0.127
(.035 ?.005)
RECOMMENDED SOLDER PAD LAYOUT
0.305 ?0.038
(.0120 ?.0015)
TYP
0.50
(.0197)
BSC
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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